KOREA ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY HAS UNCOVERED RRAM RESISTIVE RANDOM ACCESS MEMORY A NON VOLATILE MEMORY USING GRAPHINE OXIDE AS OPPOSED TO SILICON USED IN FLASH MEMORY MAKING POSSIBLE SMALLER AND THINNER AND FASTER MEMORY APPLICATION

A group of Korean researchers has uncovered the properties of a graphene memory device for the first time, Ulsan National Institute of Science and Technology (UNIST) said Thursday.
Expectations are high that the scientific achievement will accelerate research into the next-generation non-volatile memory medium, dubbed "resistive random access memory (RRAM)."
The team, composed of UNIST Central Research Facilities Professor Jeong Hu-young and Korea Advanced Institute of Science and Technology (KAIST) professors Lee Jeong-yong and Choi Sung-yool, has discovered how the properties of memory devices made of the electric insulator graphene oxide are possible.
"Because a graphene oxide thin film is made of carbon and oxygen, which are vulnerable to electron beams, it is difficult to observe by raising acceleration voltage of an ordinary transmission electron microscope," Jeong said. "We have discovered the unknown mechanism by introducing a cross-section transmission electron microscope, which is optimized for graphene oxide thin film."
The professor stressed that the research results will pave the way for graphene oxide thin film to be applied to diverse electronic devices.
Whereas flash memory chips made of silicon are used most widely around the globe, the demand for a non-volatile memory device which is smaller and thinner has expanded.

http://www.koreatimes.co.kr/www/news/tech/2015/11/325_191407.html